LiNbO3 & MgO:LiNbO3 Crystals
LiNbO3 crystal is a low cost photoelectric material with good mechanical and physical properties as well as high optical homogeneity. It has been widely used as frequency doublers for wavelength > 1mm and optical parametric oscillators (OPOs) pumped at 1064nm as well as quasi-phase-matched (QPM) devices. With preferable E-O coefficients, LiNbO3 crystal has become the most commonly used material for Q-switches and phase modulators, waveguide substrate, and surface acoustic wave (SAW) wafers, etc. Compared with LiNbO3, MgO:LiNbO3 crystal exhibits higher damage threshold
THATSHIGH Specifications for LiNbO3 & MgO:LiNbO3 Pockels cell:
Typical Sizes | 9×9×25 mm3 10×10×20 mm3 6×6×20 mm3 4×4×15 mm3 |
Other size is available upon request | |
Dimension Tolerance | Z-axis: ± 0.2 mm |
X-axis and Y-axis: ±0.1 mm | |
Chamfer | < 0.2 mm @ 45° |
Accuracy of Orientation | Z-axis: < ± 5′ |
Parallelism | < 10" |
Surface Quality [S/D] | 10/5 |
Flatness | λ/10 @ 633 nm |
AR-coating | R < 0.15% @ 1064 nm |
Electrodes | Gold/Chrome plated on X-faces |
Wavefront Distortion | < λ/6 @ 633 nm |
Extinction Ratio | > 100:1 @ 633 nm (ϕ6 mm beam) |
Damage Threshold | 100 MW/cm2 (10 ns, 1064 nm) |
LiNbO3 & MgO:LiNbO3 Crystals
LiNbO3 crystal is a low cost photoelectric material with good mechanical and physical properties as well as high optical homogeneity. It has been widely used as frequency doublers for wavelength > 1mm and optical parametric oscillators (OPOs) pumped at 1064nm as well as quasi-phase-matched (QPM) devices. With preferable E-O coefficients, LiNbO3 crystal has become the most commonly used material for Q-switches and phase modulators, waveguide substrate, and surface acoustic wave (SAW) wafers, etc. Compared with LiNbO3, MgO:LiNbO3 crystal exhibits higher damage threshold
THATSHIGH Specifications for LiNbO3 & MgO:LiNbO3 Pockels cell:
Typical Sizes | 9×9×25 mm3 10×10×20 mm3 6×6×20 mm3 4×4×15 mm3 |
Other size is available upon request | |
Dimension Tolerance | Z-axis: ± 0.2 mm |
X-axis and Y-axis: ±0.1 mm | |
Chamfer | < 0.2 mm @ 45° |
Accuracy of Orientation | Z-axis: < ± 5′ |
Parallelism | < 10" |
Surface Quality [S/D] | 10/5 |
Flatness | λ/10 @ 633 nm |
AR-coating | R < 0.15% @ 1064 nm |
Electrodes | Gold/Chrome plated on X-faces |
Wavefront Distortion | < λ/6 @ 633 nm |
Extinction Ratio | > 100:1 @ 633 nm (ϕ6 mm beam) |
Damage Threshold | 100 MW/cm2 (10 ns, 1064 nm) |