INFRARED LED CHIPS (>1000 nm)
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Features
- Top emitting device
- Lambertian radiation
- Optimized for SMT applications
- Wavelength (typ.): 970 nm
- Polarity: n-side up
Applications
- Sensors
- Infrared Illumination
- Industrial electronics
| Product | Typ. Wavelength | Typ. Brightness | Measurement Current | Size | Typ. Chip Height | Polarity | Data Sheet |
| LA PI13WP3 | 1050 nm | 4 mW | 20 mA | 330 µm | 190 µm | n side up | ☞ |
| LA RI14IP2 | 1350 nm | 3 mW | 50 mA | 350 µm | 150 µm | p side up | ☞ |
| LA SI14IP2 | 1450 nm | 3 mW | 50 mA | 350 µm | 150 µm | p side up | ☞ |
| Product | Typ. Wavelength | Typ. Brightness | Measurement Current | Size | Typ. Chip Height | Polarity | Data Sheet |
| LA PI13WP3 | 1050 nm | 4 mW | 20 mA | 330 µm | 190 µm | n side up | ☞ |
| LA RI14IP2 | 1350 nm | 3 mW | 50 mA | 350 µm | 150 µm | p side up | ☞ |
| LA SI14IP2 | 1450 nm | 3 mW | 50 mA | 350 µm | 150 µm | p side up | ☞ |